Progress in Antimonide Based III-V Compound Semiconductors and Devices

Progress in Antimonide Based III-V Compound Semiconductors and Devices

In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...

Antimonide-based compound semiconductors for electronic devices: A review

Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrowbandgap Sb-based devices over conventional GaAsor InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HE...

Thermal Transport in Iii-v Semiconductors and Devices

iii ACKNOWLEDGEMENTS I would like to acknowledge the support of my thesis advisor Dr. Samuel Graham. His guidance throughout this project has been tremendous and I have learned much that will benefit for the rest of my life. I would also like to thank Dr. Doolittle and Dr. Russell Dupuis for their knowledge base and their support of this project. Their generous offerings of fabricated devices, ...

Integration of GaAsP based III-V compound semiconductors to silicon technology

Aalto University, P.O. Box 11000, FI-00076 Aalto www.aalto.fi Author Henri Jussila Name of the doctoral dissertation Integration of GaAsP based III-V compound semiconductors to silicon technology Publisher School of Electrical Engineering Unit Department of Microand Nanosciences Series Aalto University publication series DOCTORAL DISSERTATIONS 135/2014 Field of research Semiconductor materials ...

Ferromagnetism in (III,Mn)V Semiconductors